亞陶編碼FQ1200007是一種有著極強耐壓性和微型貼片的石英晶體,常用于數碼相機和智能手機,ECERA高質量晶振
來源:http://m.11ed.cn 作者:lzf 2022年07月13
百利通亞陶公司為臺灣知名晶體元器件制造商,通過自身的努力與信念,成為了杰出的上市集團公司,其中離不開其敢于克服每一次所遇到的困難,并且懂得在困難中找到最優的解決方案,付諸于行動,反思自身不足之處,并快速補足補足之處,才有如今的Diodes公司,每一步走來看似很簡單,實則可謂用心到極致,不斷成長與創新能力,是亞陶的發展重要之道.專注于研發設計生產高質量的石英晶體諧振器,有源晶振,溫補振蕩器等系列產品線,并確保所生產的產品質量,以完美狀態呈現給每一位用戶,并以高于用戶期待要求自身。亞陶編碼FQ1200007是一種有著極強耐壓性和微型貼片的石英晶體,常用于數碼相機和智能手機,ECERA高質量晶振
FL3200022 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 32MHz | ±10ppm |
FL1200135 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 12MHz | ±50ppm |
FL1200135 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 12MHz | ±50ppm |
FL1200135 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 12MHz | ±50ppm |
FL1200060 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 12MHz | ±30ppm |
FL1200060 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 12MHz | ±30ppm |
FL1200060 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 12MHz | ±30ppm |
FL1840007 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 18.432MHz | ±20ppm |
FL1840007 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 18.432MHz | ±20ppm |
FL1840007 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 18.432MHz | ±20ppm |
FL1600043 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 16MHz | ±10ppm |
FL1600043 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 16MHz | ±10ppm |
FL1600043 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 16MHz | ±10ppm |
FL2000038 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 20MHz | ±10ppm |
FL2000038 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 20MHz | ±10ppm |
FL2000038 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 20MHz | ±10ppm |
FL2500047 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 25MHz | ±20ppm |
FL2500047 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 25MHz | ±20ppm |
FL2500047 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 25MHz | ±20ppm |
FL1600080 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 16MHz | ±10ppm |
FL1600080 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 16MHz | ±10ppm |
FL1600080 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 16MHz | ±10ppm |
FL3740009 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±15ppm |
FL3740009 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±15ppm |
FL3740009 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 37.4MHz | ±15ppm |
FL1200138 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 12MHz | ±50ppm |
FL1200138 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 12MHz | ±50ppm |
FL1200138 | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 12MHz | ±50ppm |
FL2500213Z | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 25MHz | ±20ppm |
FL2500213Z | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 25MHz | ±20ppm |
FL2500213Z | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 25MHz | ±20ppm |
FQ2500016 | Diodes晶振 | SaRonix-eCera™ FQ | MHz Crystal | 25MHz | ±20ppm |
FQ2500016 | Diodes晶振 | SaRonix-eCera™ FQ | MHz Crystal | 25MHz | ±20ppm |
FQ2500016 | Diodes晶振 | SaRonix-eCera™ FQ | MHz Crystal | 25MHz | ±20ppm |
FQ1200007 | Diodes晶振 | SaRonix-eCera™ FQ | MHz Crystal | 12MHz | ±30ppm |
FQ1200007 | Diodes晶振 | SaRonix-eCera™ FQ | MHz Crystal | 12MHz | ±30ppm |
FQ1200007 | Diodes晶振 | SaRonix-eCera™ FQ | MHz Crystal | 12MHz | ±30ppm |
FL2500316Z | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 25MHz | ±20ppm |
FL2500316Z | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 25MHz | ±20ppm |
FL2500316Z | Diodes晶振 | SaRonix-eCera™ FL | MHz Crystal | 25MHz | ±20ppm |
FY2500016 | Diodes晶振 | SaRonix-eCera™ FY | MHz Crystal | 25MHz | ±30ppm |
FY2500016 | Diodes晶振 | SaRonix-eCera™ FY | MHz Crystal | 25MHz | ±30ppm |
FY2500016 | Diodes晶振 | SaRonix-eCera™ FY | MHz Crystal | 25MHz | ±30ppm |
US3200005Z | Diodes晶振 | SaRonix-eCera™ US | MHz Crystal | 32MHz | ±10ppm |
US3200005Z | Diodes晶振 | SaRonix-eCera™ US | MHz Crystal | 32MHz | ±10ppm |
US3200005Z | Diodes晶振 | SaRonix-eCera™ US | MHz Crystal | 32MHz | ±10ppm |
FP0800056Z | Diodes晶振 | SaRonix-eCera™ FP | MHz Crystal | 8MHz | ±30ppm |
FP0800056Z | Diodes晶振 | SaRonix-eCera™ FP | MHz Crystal | 8MHz | ±30ppm |
FP0800056Z | Diodes晶振 | SaRonix-eCera™ FP | MHz Crystal | 8MHz | ±30ppm |
FH1840004 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 18.432MHz | ±30ppm |
FH1840004 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 18.432MHz | ±30ppm |
FH1840004 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 18.432MHz | ±30ppm |
FH4800014 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 48MHz | ±10ppm |
FH4800014 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 48MHz | ±10ppm |
FH4800014 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 48MHz | ±10ppm |
FH1200001 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 12MHz | ±30ppm |
FH1200001 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 12MHz | ±30ppm |
FH1200001 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 12MHz | ±30ppm |
FH4000039 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 40MHz | ±10ppm |
FH4000039 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 40MHz | ±10ppm |
FH4000039 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 40MHz | ±10ppm |
FH3200011 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 32MHz | ±10ppm |
FH3200011 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 32MHz | ±10ppm |
FH3200011 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 32MHz | ±10ppm |
FH2400049 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 24MHz | ±30ppm |
FH2400049 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 24MHz | ±30ppm |
FH2400049 | Diodes晶振 | SaRonix-eCera™ FH | MHz Crystal | 24MHz | ±30ppm |
TOLL 封裝的焊料接觸面積比 TO263 大 50%,可實現 0.65°C/W 的結殼熱阻抗,從而使這些 MOSFET 能夠處理高達 270A 的電流。它們的鍍錫梯形凹槽引線有助于促進自動光學檢測 (AOI) 程序。這些 MOSFET 符合 AEC-Q101、PPAP 標準,并在 IATF 16949 認證設施中制造。
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